Datasheet4U Logo Datasheet4U.com

PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET

PTAC210802FC Description

PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 * 2170 MHz .
The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2.

PTAC210802FC Features

* include dual-path design, input matching, high gain and thermallyenhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTAC210802FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Tw

📥 Download Datasheet

Preview of PTAC210802FC PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • PTA07N65B - 650V N-ch Planar MOSFET (PIP)
  • PTA07N80 - 800V N-Channel MOSFET (PIP)
  • PTA10N80 - 800V N-Channel MOSFET (PIP)
  • PTA1543 - Low Profile Slide Potentiometer (Bourns)
  • PTA2043 - Low Profile Slide Potentiometer (Bourns)
  • PTA20N40 - 400V N-Channel MOSFET (PIP)
  • PTA20N50A - 500V N-Channel MOSFET (PIP)
  • PTA27N20N - 200V N-Channel MOSFET (PIP)

📌 All Tags

Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTAC210802FC-like datasheet