PTAC210802FC - Thermally-Enhanced High Power RF LDMOS FET
PTAC210802FC Features
* include dual-path design, input matching, high gain and thermallyenhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTAC210802FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Tw
