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PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET

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Description

PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 * 2170 MHz .
The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2.

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Features

* include dual-path design, input matching, high gain and thermallyenhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTAC210802FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Tw

PTAC210802FC Distributors

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PTAC210802FC Thermally-Enhanced High Power LDMOS FET Infineon
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