PTAC240502FC - Thermally-Enhanced High Power RF LDMOS FET
PTAC240502FC Features
* include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD
