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PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET

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Description

PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 * 2400 MHz .
The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 23.

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Features

* include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD

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PTAC240502FC Thermally-Enhanced High Power LDMOS FET Infineon
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