GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT

CREE

GTVA261701FA Datasheet Preview — Preview of GTVA261701FA PDF

Datasheet Details

Part number	GTVA261701FA
Manufacturer	CREE
File Size	450.26 KB
Description	Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet	GTVA261701FA-CREE.pdf

GTVA261701FA Product details

Description

The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Features

input matching, high efficiency, and a thermally-enhanced package with earless flange. GTVA261701FA Package H-37265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 32 80 28 24 Efficiency 60 40 20 20 16 Gain 0 12 -20 8 4 PAR @ 0.01% CCDF -40 -60 0 -80g261701fa-gr1a 27 31 35 39 43 47 51 Average Output Power (dBm) Features.
GaN on SiC HEMT technology.

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Published: Feb 3, 2019 |