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PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET

PTFB212507SH Description

PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 * 2170 MHz .
The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency ba.

PTFB212507SH Features

* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB212507SH Package H-37288G-4/2 IMD (dBc) Drain Efficiency (%) Singl

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTFB212507SH-like datasheet