PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 * 2170 MHz .
The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency ba.

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Datasheet Specifications

Part number: PTFB212507SH
Manufacturer: Infineon ↗
File Size: 189.71 KB
Datasheet: PTFB212507SH-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB212507SH Package H-37288G-4/2 IMD (dBc) Drain Efficiency (%) Singl

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PTFB212507SH Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFB212507SH-like datasheet