Part number:
PTFB212507SH
Manufacturer:
File Size:
189.71 KB
Description:
Thermally-enhanced high power rf ldmos fet.
* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB212507SH Package H-37288G-4/2 IMD (dBc) Drain Efficiency (%) Singl
PTFB212507SH Datasheet (189.71 KB)
PTFB212507SH
189.71 KB
Thermally-enhanced high power rf ldmos fet.
📁 Related Datasheet
PTFB212503EL Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFB211501E Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB211503EL Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB211803EL Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB213004F High Power RF LDMOS Field Effect Transistor (Infineon)