PTFB212507SH - Thermally-Enhanced High Power RF LDMOS FET
PTFB212507SH Features
* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB212507SH Package H-37288G-4/2 IMD (dBc) Drain Efficiency (%) Singl
