PTFB212503FL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB212503FL Features
* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB212503EL Package H-33288-6 PTFB2
