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PTFB212503FL, PTFB212503EL Thermally-Enhanced High Power RF LDMOS FETs

PTFB212503FL Description

PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 * 2170 MHz .
The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170.

PTFB212503FL Features

* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB212503EL Package H-33288-6 PTFB2

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PTFB212503FL, PTFB212503EL. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PTFB212503FL, PTFB212503EL
Manufacturer
Infineon ↗
File Size
447.99 KB
Datasheet
PTFB212503EL-Infineon.pdf
Description
Thermally-Enhanced High Power RF LDMOS FETs
Note
This datasheet PDF includes multiple part numbers: PTFB212503FL, PTFB212503EL.
Please refer to the document for exact specifications by model.

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Thermally-Enhanced High Power LDMOS FETs Infineon
Infineon PTFB212503FL-like datasheet