PTFB212503EL Datasheet, Fets, Infineon

✔ PTFB212503EL Features

include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with Infineon's advanced

✔ PTFB212503EL Application

in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain, wide signal b

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PTFB212503EL

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fets. The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in

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RF MOSFET LDMOS 30V H-33288-6

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PTFB212503EL-V1-R0

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PTFB212503EL Thermally-Enhanced High Power LDMOS FETs Infineon