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PTFB212503EL Datasheet - Infineon

PTFB212503EL Thermally-Enhanced High Power RF LDMOS FETs

PTFB212503EL Features

* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB212503EL Package H-33288-6 PTFB2

PTFB212503EL-Infineon.pdf

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Datasheet Details

Part number:

PTFB212503EL

Manufacturer:

Infineon ↗

File Size:

447.99 KB

Description:

Thermally-enhanced high power rf ldmos fets.

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PTFB212503EL PTFB212503EL Thermally-Enhanced High Power LDMOS FETs Infineon

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