PTFB212503EL Thermally-Enhanced High Power RF LDMOS FETs

Infineon

Description

PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 * 2170 MHz .
The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170.

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Datasheet Specifications

Part number: PTFB212503EL
Manufacturer: Infineon ↗
File Size: 447.99 KB
Datasheet: PTFB212503EL-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FETs

Features

* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB212503EL Package H-33288-6 PTFB2

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PTFB212503EL Thermally-Enhanced High Power LDMOS FETs Infineon

Infineon PTFB212503EL-like datasheet