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PTFB212503EL Thermally-Enhanced High Power RF LDMOS FETs

PTFB212503EL Description

PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 * 2170 MHz .
The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170.

PTFB212503EL Features

* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB212503EL Package H-33288-6 PTFB2

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Thermally-Enhanced High Power LDMOS FETs Infineon
Infineon PTFB212503EL-like datasheet