CGHV35120F GaN HEMT

MACOM

Description

CGHV35120F 120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems .
The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandw.

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Datasheet Specifications

Part number: CGHV35120F
Manufacturer: MACOM
File Size: 532.15 KB
Datasheet: CGHV35120F-MACOM.pdf
Description: GaN HEMT

Features

* Rated Power = 120 W @ TCASE = 85°C
* Operating Frequency = 2.9 - 3.8 GHz
* Transient 100 μsec - 300 μsec @ 20% Duty Cycle
* 13 dB Power Gain @ TCASE = 85°C
* 62% Typical Drain Efficiency @ TCASE = 85°C
* Input Matched

Applications

* The transistor is supplied in a ceramic/metal flange package. PN: 440162 Package Type: CGHV35120F Typical Performance 3.1 - 3.5 GHz (TC = 85ºC) Parameter 3.1 GHz 3.2 GHz Output Power 142 135 Gain 13 12.8 Drain Efficiency 68 66 3.3 GHz 132 12.8 63 3.4 GHz 136 12.9 62 3.5 GHz 134 12.

CGHV35120F Distributors

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CGHV35120F GaN HEMT MACOM

MACOM CGHV35120F-like datasheet