CGHV35120F

GaN HEMT

MACOM

Image	Manufacturer	Part Number	B2B mpn	Description	Distributor	Stock	Quantity	Price	Buy Now
	MACOM	CGHV35120F	CGHV35120F	RF MOSFET HEMT 48V 440162	DigiKey	34	20 units	$285.39	🛒 Buy Now

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CGHV35120F Datasheet Preview Page 1 — Preview of CGHV35120F Datasheet

Datasheet Details

Part number:

CGHV35120F

Manufacturer:

MACOM

File Size:

532.15 KB

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📄 Download CGHV35120F Datasheet PDF

Description:

Gan hemt.
CGHV35120F 120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems Description The CGHV35120F .
The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifica.

✔ CGHV35120F Features

Rated Power = 120 W @ TCASE = 85°C
Operating Frequency = 2.9 - 3.8 GHz
Transient 100 μsec - 300 μsec @ 20% Duty Cycle
13 dB Power Gain @ TCASE = 85°C
62% Typic

✔ CGHV35120F Application

The transistor is supplied in a ceramic/metal flange package. PN: 440162 Package Type: CGHV35120F Typical

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CGHV35120F GaN HEMT MACOM

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CGHV35120F Distributor

MACOM

CGHV35120F

GaN FETs Amplifier,GaN,120W,3.1-3.5GHz,G50V3,50V

Mouser Electronics

0 In Stock

Qty : 50 units

Unit Price : $546.9

MACOM

CGHV35120F

RF POWER TRANSISTOR

Richardson RFPD

0 In Stock

Qty : 20 units

Unit Price : $429.98

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