CGHV35120F Datasheet (MACOM)

CGHV35120F, GaN HEMT

The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications.

The transistor is supplied in a ceramic/met

CGHV35120F Features

* Rated Power = 120 W @ TCASE = 85°C

* Operating Frequency = 2.9 - 3.8 GHz

* Transient 100 μsec - 300 μsec @ 20% Duty Cycle

* 13 dB Power Gain @ TCASE = 85°C

* 62% Typical Drain Efficiency @ TCASE = 85°C

* Input Matched