CGHV35120F - GaN HEMT

MACOM

CGHV35120F Datasheet Preview — Preview of CGHV35120F PDF

Datasheet Details

Part number	CGHV35120F
Manufacturer	MACOM
File Size	532.15 KB
Description	GaN HEMT
Datasheet	CGHV35120F-MACOM.pdf

CGHV35120F Product details

Description

The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications.

Features

Rated Power = 120 W @ TCASE = 85°C.
Operating Frequency = 2.9 - 3.8 GHz.
Transient 100 μsec - 300 μsec @ 20% Duty Cycle.
13 dB Power Gain @ TCASE = 85°C.
62% Typical Drain Efficiency @ TCASE = 85°C.
Input Matched.

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Published: May 13, 2024 |