CGHV35120F Datasheet - MACOM

GaN HEMT

CGHV35120F Features

* Rated Power = 120 W @ TCASE = 85°C

* Operating Frequency = 2.9 - 3.8 GHz

* Transient 100 μsec - 300 μsec @ 20% Duty Cycle

* 13 dB Power Gain @ TCASE = 85°C

* 62% Typical Drain Efficiency @ TCASE = 85°C

* Input Matched

CGHV35120F General Description

The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/met.

CGHV35120F Datasheet (532.15 KB)

CGHV35120F Datasheet Preview — Preview of CGHV35120F PDF

Datasheet Details

Part number:

CGHV35120F

Manufacturer:

MACOM

File Size:

532.15 KB

Description:

Gan hemt.

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CGHV35120F GaN HEMT MACOM

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CGHV35120F Features

CGHV35120F General Description

Datasheet Details

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Description:

CGHV35120F Distributor