CGHV35400F Datasheet - Cree

CGHV35400F GaN HEMT

RES, 511, OHM, +/- 1%, 1/16W, 0603 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 CAP, 6.8pF, +/-0.25%, 250V, 0603 CAP, 10.0pF, +/-1%, 250V, 0805 CAP, 10.0pF, +/-5%, 250V, 0603 CAP, 470pF, 5%, 100V, 0603, X CAP, 33000 pF, 0805, 100V, X7R CAP, 10uF 16V TANTALUM CAP, 1.0uF, 100V, 10%, X7R, 1210 CAP, 33uF, 20%, G .

CGHV35400F 400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440210. PN: Package TCyGpHeV: 43450420105F Typical Performance Over 2.9.

CGHV35400F Features

* 2.9 - 3.5 GHz Operation

* 400 W Typical Output Power

* 10.5 dB Power Gain

* 60% Typical Drain Efficiency

* 50 Ohm Internally Matched

CGHV35400F-Cree.pdf