CGHV35150 Datasheet - Cree

CGHV35150 GaN HEMT

RES, 511 OHM, +/- 1%, 1/16W, 0603 RES, 5.1 OHM, +/- 1%, 1/16W, 0603 CAP, 10pF, +/- 1%, 250V, 0805 CAP, 6.8pF, +/- 0.25 pF,250V, 0603 CAP, 10.0pF, +/-5%,250V, 0603 CAP, 470PF, 5%, 100V, 0603, X CAP, 33000PF, 0805,100V, X7R CAP 10uF 16V TANTALUM CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP, 33 UF, 20%, G CASE.

CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. PNPa: CckGaHgVe3T5y1p5e0: F44/0C1G9H3V/3454105200P6 Typical Performance 3.1 - 3.5 GHz (TC = 85˚C.

CGHV35150 Features

* Rated Power = 150 W @ TCASE = 85°C

* Operating Frequency = 2.9 - 3.5 GHz

* Transient 100 µsec - 300 µsec @ 20% Duty Cycle

* 13.5 dB Power Gain @ TCASE = 85°C

* 50 % Typical Drain Efficiency @ TCASE = 85°C

* Input Matched

CGHV35150-Cree.pdf