* Rated Power = 150 W @ TCASE = 85°C
* Operating Frequency = 2.9 - 3.5 GHz
* Transient 100 µsec - 300 µsec @ 20% Duty Cycle
* 13.5 dB Power Gain @ TCASE = 85°C
* 50 % Typical Drain Efficiency @ TCASE = 85°C
* Input Matched
CGHV35150 Datasheet (506.83 KB)
CGHV35150
Cree
506.83 KB
Gan hemt.
CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor.
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