CGHV35150 GaN HEMT

Cree

Description

CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor.
RES, 511 OHM, +/- 1%, 1/16W, 0603 RES, 5.

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Datasheet Specifications

Part number: CGHV35150
Manufacturer: Cree
File Size: 506.83 KB
Datasheet: CGHV35150-Cree.pdf
Description: GaN HEMT

Features

* Rated Power = 150 W @ TCASE = 85°C
* Operating Frequency = 2.9 - 3.5 GHz
* Transient 100 µsec - 300 µsec @ 20% Duty Cycle
* 13.5 dB Power Gain @ TCASE = 85°C
* 50 % Typical Drain Efficiency @ TCASE = 85°C
* Input Matched

Applications

* The transistor is supplied in a ceramic/metal flange and pill package. PNPa: CckGaHgVe3T5y1p5e0: F44/0C1G9H3V/3454105200P6 Typical Performance 3.1 - 3.5 GHz (TC = 85˚C) Parameter 3.1 GHz 3.2 GHz Output Power 180 180 Gain 13.5 13.5 Drain Efficiency 50 49 3.3 GHz 180 13.5 50 3.4 GHz 170

CGHV35150 Distributors

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CGHV35150 GaN HEMT Cree

Cree CGHV35150-like datasheet