CGHV14500 Datasheet - Cree

CGHV14500 GaN HEMT

R1 RES, 1/16W, 0603, 1%, 562 OHMS R2 RES, 5.1 OHM, +/-1%, 1/16W, 0603 R3 RES, 1/16W, 0603, 1%, 4700 OHMS L1 INDUCTOR, CHIP, 6.8 nH, 0603 SMT C1, C23 CAP, 27pF, +/- 5%, 250V, 0805, ATC 600F C2 CAP, 2.0pF, +/- 0.1pF, 0603, ATC C3, C4 CAP, 1.5pF, +/-0.05pF, 250V, 0805, ATC 600F C5,C6 CAP, 1..

CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package. Package T.

CGHV14500 Features

* Reference design amplifier 1.2 - 1.4 GHz Operation

* FET tuning range UHF through 1800 MHz

* 530 W Typical Output Power

* 16 dB Power Gain

* 68% Typical Drain Efficiency

CGHV14500-Cree.pdf