CGHV14500 GaN HEMT

Cree

Description

CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HE.
R1 RES, 1/16W, 0603, 1%, 562 OHMS R2 RES, 5.

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Datasheet Specifications

Part number: CGHV14500
Manufacturer: Cree
File Size: 746.24 KB
Datasheet: CGHV14500-Cree.pdf
Description: GaN HEMT

Features

* Reference design amplifier 1.2 - 1.4 GHz Operation
* FET tuning range UHF through 1800 MHz
* 530 W Typical Output Power
* 16 dB Power Gain
* 68% Typical Drain Efficiency

Applications

* The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package. Package Type:P4N4:0C1G17H,V41440510303 Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.2 GHz

CGHV14500 Distributors

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CGHV14500 GaN HEMT Cree

Cree CGHV14500-like datasheet