CGHV14500
Cree
746.24kb
Gan hemt. R1 RES, 1/16W, 0603, 1%, 562 OHMS R2 RES, 5.1 OHM, +/-1%, 1/16W, 0603 R3 RES, 1/16W, 0603, 1%, 4700 OHMS L1 INDUCTOR, CHIP, 6.8 n
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📁 Related Datasheet
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(MACOM)
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Description
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250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems
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800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
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800 W, 960 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
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800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
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(Wolfspeed)
CGHV14800F1
DC-1.4 GHz, 800 W GaN Transistor
Description
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CGHV1F006S - GaN HEMT
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CGHV1F006S - GaN HEMT
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6 W, DC - 15 GHz, 40 V, GaN HEMT
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CGHV1F025S - GaN HEMT
(MACOM)
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25 W, DC - 15 GHz, 40 V, GaN HEMT
Description
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