CGHV14500 Datasheet - Cree

CGHV14500, GaN HEMT

CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HE.
R1 RES, 1/16W, 0603, 1%, 562 OHMS R2 RES, 5.

datasheet Preview Page 1 from Datasheet4u.com

CGHV14500-Cree.pdf

CGHV14500 Datasheet Preview — Preview of CGHV14500 PDF

Datasheet Details

Part number:

CGHV14500

Manufacturer:

Cree

File Size:

746.24 KB

Description:

GaN HEMT

Features

* Reference design amplifier 1.2 - 1.4 GHz Operation
* FET tuning range UHF through 1800 MHz
* 530 W Typical Output Power
* 16 dB Power Gain
* 68% Typical Drain Efficiency

Applications

* The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package. Package Type:P4N4:0C1G17H,V41440510303 Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.2 GHz

CGHV14500 Distributors

📁 Related Datasheet

CGHV14500F CGHV14800F1 CGHV1F025S CGHV1J006D CGHV1J025D CGHV1J070D

📌 All Tags

CGHV14500 GaN HEMT Cree

Cree CGHV14500-like datasheet