CGHV27030S Datasheet, Hemt, CREE

CGHV27030S Features

• Hemt for 50 V in CGHV27030S-TB1
• 2.5 - 2.7 GHz Operation
• 30 W Typical Output Power
• 21 dB Gain at 5 W PAVE
• -36 dBc ACLR at 5 W PAVE
• 32% effici

PDF File Details

Part number:

CGHV27030S

Manufacturer:

CREE

File Size:

2.63MB

Download:

📄 Datasheet

Description:

Gan hemt. RES, 22.6, OHM, +/-1%, 1/16W, 0603 CAP, 3.3 pF, ±0.1 pF, 0603, ATC CAP, 0.7 pF, ±0.05 pF, 0603, ATC CAP, 8.2 pF, ±0.25 pF, 0603, ATC

CGHV27030S Application

• Applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V CGHV27030S is also ideal

TAGS

CGHV27030S

CREE

📁 Related Datasheet

CGHV27030S - GaN HEMT (MACOM)
CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT Description The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) whi.

CGHV27015S - GaN HEMT (Cree)
CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) desi.

CGHV27015S - GaN HEMT (Wolfspeed)
CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Description Wolfspeed’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transis.

CGHV27060MP - GaN HEMT (Cree)
CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron .

CGHV27100 - GaN HEMT (Cree)
CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is d.

CGHV27200 - GaN HEMT (Cree)
PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HE.

CGHV22100 - GaN HEMT (Cree)
CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designe.

CGHV22200 - GaN HEMT (Cree)
CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designe.

CGHV14250 - GaN HEMT (Cree)
CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HE.

CGHV14250 - GaN HEMT (Wolfspeed)
CGHV14250 250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems Description Wolfspeed’s CGHV14250 is a gallium nitride (GaN) high electron mobility t.