CGHV27030S GaN HEMT

CREE

Description

CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers .
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CGHV27030S Datasheet Preview — Preview of CGHV27030S PDF

Datasheet Specifications

Part number: CGHV27030S
Manufacturer: CREE
File Size: 2.63 MB
Datasheet: CGHV27030S-CREE.pdf
Description: GaN HEMT

Features

* for 50 V in CGHV27030S-TB1
* 2.5 - 2.7 GHz Operation
* 30 W Typical Output Power
* 21 dB Gain at 5 W PAVE
* -36 dBc ACLR at 5 W PAVE
* 32% efficiency at 5 W PAVE
* High degree of APD and DPD correction can be applied Listing of Available Hardware Appli

Applications

* with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V CGHV27030S is also ideal for tactical communications and 28 V operations. applications operating The from 20-25P0a0ckaPgNe :TyCpGeH:V32x740D30FSN MHz, including land mobile radios. Addit

CGHV27030S Distributors

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CGHV27030S GaN HEMT CREE

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