CGH40035F RF Power GaN HEMT

CREE

Description

CGH40035F 35 W, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CGH40035F, ope.
RES, 1/16W, 0603, ≤5%, 5.

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CGH40035F Datasheet Preview — Preview of CGH40035F PDF

Datasheet Specifications

Part number: CGH40035F
Manufacturer: CREE
File Size: 1.65 MB
Datasheet: CGH40035F_CREE.pdf
Description: RF Power GaN HEMT

Features

* Up to 4 GHz Operation
* 15 dB Small Signal Gain at 2.0 GHz
* 13 dB Small Signal Gain at 4.0 GHz
* 45 W typical PSAT
* 60 % Efficiency at PSAT

CGH40035F Distributors

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CGH40035F Power GaN HEMT CREE

CREE CGH40035F-like datasheet