* Up to 4 GHz Operation
* 15 dB Small Signal Gain at 2.0 GHz
* 13 dB Small Signal Gain at 4.0 GHz
* 45 W typical PSAT
* 60 % Efficiency at PSAT
* 28 V Operation APPLICATIONS
* 2-Way Private Radio
* Broadband Amplifiers
CGH40035F
CREE
1.65 MB
Rf power gan hemt.
CGH40035F
35 W, RF Power GaN HEMT
Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, ope.
📁 Related Datasheet
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CGH40006S RF Power GaN HEMT (Cree)
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