Part number:
CGH40025
Manufacturer:
MACOM
File Size:
842.39 KB
Description:
Rf power gan hemt.
The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabil
CGH40025 Features
* Up to 6 GHz Operation
* 15 dB Small Signal Gain at 2.0 GHz
* 13 dB Small Signal Gain at 4.0 GHz
* 30 W typical PSAT
* 62% Efficiency at PSAT
* 28 V Operation Applications
* 2-Way Private Radio
* Broadband Amplifiers
* Cellula
Datasheet Details
CGH40025
MACOM
842.39 KB
Rf power gan hemt.
📁 Related Datasheet
📌 All Tags