CGH40025 RF Power GaN HEMT

MACOM

Description

CGH40025 25 W, RF Power GaN HEMT .
The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

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CGH40025 Datasheet Preview — Preview of CGH40025 PDF

Datasheet Specifications

Part number: CGH40025
Manufacturer: MACOM
File Size: 842.39 KB
Datasheet: CGH40025-MACOM.pdf
Description: RF Power GaN HEMT

Features

* Up to 6 GHz Operation
* 15 dB Small Signal Gain at 2.0 GHz
* 13 dB Small Signal Gain at 4.0 GHz
* 30 W typical PSAT
* 62% Efficiency at PSAT

Applications

* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill package. Package Types: 440196 & 440166 PN: CGH40025P & CGH40025F Fe

CGH40025 Distributors

📁 Related Datasheet

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CGH40025 Power GaN HEMT MACOM

MACOM CGH40025-like datasheet