CGH40025 Datasheet - MACOM

CGH40025 RF Power GaN HEMT

The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabil.

CGH40025 Features

* Up to 6 GHz Operation

* 15 dB Small Signal Gain at 2.0 GHz

* 13 dB Small Signal Gain at 4.0 GHz

* 30 W typical PSAT

* 62% Efficiency at PSAT

* 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Cellula

CGH40025-MACOM.pdf

CGH40025 Datasheet Preview — Preview of CGH40025 PDF

Datasheet Details

Part number:

CGH40025

Manufacturer:

MACOM

File Size:

842.39 KB

Description:

Rf power gan hemt.

📁 Related Datasheet

CGH40025 RF Power GaN HEMT (Cree)

CGH40025F GaN HEMT (Cree)

CGH40006P RF Power GaN HEMT (MACOM)

CGH40006P RF Power GaN HEMT (Cree)

CGH40006P RF Power GaN HEMT (Wolfspeed)

CGH40006S RF Power GaN HEMT (MACOM)

CGH40006S RF Power GaN HEMT (Cree)

CGH40006S RF Power GaN HEMT (Wolfspeed)

TAGS

CGH40025 CGH40025 Power GaN HEMT MACOM

CGH40025 Distributor