Datasheet Details
- Part number
- CGH40025
- Manufacturer
- MACOM
- File Size
- 842.39 KB
- Datasheet
- CGH40025-MACOM.pdf
- Description
- RF Power GaN HEMT
CGH40025 Description
CGH40025 25 W, RF Power GaN HEMT .
The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
CGH40025 Features
* Up to 6 GHz Operation
* 15 dB Small Signal Gain at 2.0 GHz
* 13 dB Small Signal Gain at 4.0 GHz
* 30 W typical PSAT
* 62% Efficiency at PSAT
CGH40025 Applications
* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill package. Package Types: 440196 & 440166 PN: CGH40025P & CGH40025F
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