CGH40025

RF Power GaN HEMT

MACOM

CGH40025 Features

* Up to 6 GHz Operation

* 15 dB Small Signal Gain at 2.0 GHz

* 13 dB Small Signal Gain at 4.0 GHz

* 30 W typical PSAT

* 62% Efficiency at PSAT

* 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Cellula

CGH40025 General Description

The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabil.

CGH40025 Datasheet (842.39 KB)

CGH40025 Datasheet Preview — Preview of CGH40025 PDF

Datasheet Details

Part number:

CGH40025

Manufacturer:

MACOM

File Size:

842.39 KB

Description:

Rf power gan hemt.

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CGH40025 Power GaN HEMT MACOM

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CGH40025 Features

CGH40025 General Description

Datasheet Details

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