CGH40025 Datasheet - MACOM

CGH40025 - RF Power GaN HEMT

The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabil

CGH40025 Features

* Up to 6 GHz Operation

* 15 dB Small Signal Gain at 2.0 GHz

* 13 dB Small Signal Gain at 4.0 GHz

* 30 W typical PSAT

* 62% Efficiency at PSAT

* 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Cellula

Datasheet Details

CGH40025

MACOM

842.39 KB

Rf power gan hemt.

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