CGH40035F Datasheet, Hemt, MACOM

CGH40035F Features

• Hemt
• Up to 4 GHz Operation
• 15 dB Small Signal Gain at 2.0 GHz
• 13 dB Small Signal Gain at 4.0 GHz
• 45 W typical PSAT
• 60% Efficiency at PSAT

PDF File Details

Part number:

CGH40035F

Manufacturer:

MACOM

File Size:

1.13MB

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📄 Datasheet

Description:

Rf power gan hemt. The CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 vol

CGH40035F Application

• Applications GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40035F ideal for linear and compressed amplif

TAGS

CGH40035F

MACOM

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