CGH40035F - RF Power GaN HEMT
The CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capab
CGH40035F Features
* Up to 4 GHz Operation
* 15 dB Small Signal Gain at 2.0 GHz
* 13 dB Small Signal Gain at 4.0 GHz
* 45 W typical PSAT
* 60% Efficiency at PSAT
* 28 V Operation Applications
* 2-Way Private Radio
* Broadband Amplifiers
* Cellula
