CGH40035F Datasheet - MACOM

CGH40035F RF Power GaN HEMT

The CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capab.

CGH40035F Features

* Up to 4 GHz Operation

* 15 dB Small Signal Gain at 2.0 GHz

* 13 dB Small Signal Gain at 4.0 GHz

* 45 W typical PSAT

* 60% Efficiency at PSAT

* 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Cellula

CGH40035F-MACOM.pdf

CGH40035F Datasheet Preview — Preview of CGH40035F PDF

Datasheet Details

Part number:

CGH40035F

Manufacturer:

MACOM

File Size:

1.13 MB

Description:

Rf power gan hemt.

CGH40035F Distributor

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CGH40035F CGH40035F Power GaN HEMT MACOM