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CGH40035F - RF Power GaN HEMT

MACOM

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Datasheet Details

Part number	CGH40035F
Manufacturer	MACOM
File Size	1.13 MB
Description	RF Power GaN HEMT
Datasheet	CGH40035F-MACOM.pdf

CGH40035F Product details

Description

The CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Features

Up to 4 GHz Operation.
15 dB Small Signal Gain at 2.0 GHz.
13 dB Small Signal Gain at 4.0 GHz.
45 W typical PSAT.
60% Efficiency at PSAT.
28 V Operation.

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Published: Dec 30, 2024 |