CGH40035F RF Power GaN HEMT

MACOM

Description

CGH40035F 35 W, DC - 4 GHz, RF Power GaN HEMT .
The CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Datasheet Specifications

Features

* Up to 4 GHz Operation
* 15 dB Small Signal Gain at 2.0 GHz
* 13 dB Small Signal Gain at 4.0 GHz
* 45 W typical PSAT
* 60% Efficiency at PSAT

CGH40035F Distributors

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