CGH40090PP Datasheet (Wolfspeed)

CGH40090PP, RF Power GaN HEMT

Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth

CGH40090PP Features

* Up to 2.5 GHz Operation

* 16 dB Small Signal Gain at 2.0 GHz

* 100 W Typical PSAT 55% Efficiency at PSAT 28 V Operation Large Signal Models Available for ADS and MWO Rev. 5.2, March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH400