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CGH40006P - RF Power GaN HEMT

General Description

The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 6 GHz Operation.
  • 13 dB Small Signal Gain at 2.0 GHz.
  • 11 dB Small Signal Gain at 6.0 GHz.
  • 8 W typical at PIN = 32 dBm.
  • 28 V Operation.

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Full PDF Text Transcription (Reference)

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CGH40006P 6 W, RF Power GaN HEMT Description The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill package. Package Type: 440109 PN: CGH40006P Features • Up to 6 GHz Operation • 13 dB Small Signal Gain at 2.0 GHz • 11 dB Small Signal Gain at 6.