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CGH40006P Datasheet Rf Power Gan Hemt

Manufacturer: MACOM Technology Solutions

Overview: CGH40006P 6 W, RF Power GaN HEMT.

General Description

The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits.

Key Features

  • Up to 6 GHz Operation.
  • 13 dB Small Signal Gain at 2.0 GHz.
  • 11 dB Small Signal Gain at 6.0 GHz.
  • 8 W typical at PIN = 32 dBm.
  • 28 V Operation.

CGH40006P Distributor