CGH40006S Description
CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and pressed amplifier...
CGH40006S Key Features
- Up to 6 GHz Operation
- 13 dB Small Signal Gain at 2.0 GHz
- 11 dB Small Signal Gain at 6.0 GHz
- 8 W typical at PIN = 32 dBm
- 65 % Efficiency at PIN = 32 dBm
- 28 V Operation
- 3mm x 3mm Package
CGH40006S Applications
- Up to 6 GHz Operation