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CGH40006S - RF Power GaN HEMT

General Description

The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 6 GHz Operation.
  • 13 dB Small Signal Gain at 2.0 GHz.
  • 11 dB Small Signal Gain at 6.0 GHz.
  • 8 W typical at PIN = 32 dBm.
  • 65% Efficiency at PIN = 32 dBm.
  • 28 V Operation.
  • 3mm x 3mm Package.

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CGH40006S 6 W, RF Power GaN HEMT, Plastic Description The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm x 3mm, surface mount, quad-flat-no-lead (QFN) package. Package Type: 440203 PN: CGH40006S Features • Up to 6 GHz Operation • 13 dB Small Signal Gain at 2.0 GHz • 11 dB Small Signal Gain at 6.