CGH40006S
Description
The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
Key Features
- Up to 6 GHz Operation
- 13 dB Small Signal Gain at 2.0 GHz
- 11 dB Small Signal Gain at 6.0 GHz
- 8 W typical at PIN = 32 dBm
- 65% Efficiency at PIN = 32 dBm
- 28 V Operation
- 3mm x 3mm Package
Applications
- Broadband Amplifiers
