CGH40006P - RF Power GaN HEMT

Datasheet Summary

Description

RES, AIN, 0505, 470 Ohms (≤5% tolerance) RES, AIN, 0505, 10 Ohms (≤5% tolerance) RES, AIN, 0505, 150 Ohms (≤5% tolerance) CAP, 2.0 pF +/-0.1 pF, 0603, ATC 600S CAP, 4.7 pF +/-0.1 pF, 0603, ATC 600S CAP, 3.6 pF +/-0.1 pF, 0603, ATC 600S CAP, 8.2 pF +/-0.25, 0603, ATC 600S CAP, 470 pF +/-5%, 0603, 100

Features

Up to 6 GHz Operation.
13 dB Small Signal Gain at 2.0 GHz.
11 dB Small Signal Gain at 6.0 GHz.
8 W typical at PIN = 32 dBm.
65 % Efficiency at PIN = 32 dBm.
28 V Operation.

Cree

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Datasheet Details

Part number	CGH40006P
Manufacturer	Cree
File Size	1.60 MB
Description	RF Power GaN HEMT
Datasheet	CGH40006P Datasheet
Additional preview pages of the CGH40006P datasheet.

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Full PDF Text Transcription

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CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill package. PackaPgNe’sT:yCpGesH: 4404000160P9 FEATURES • Up to 6 GHz Operation • 13 dB Small Signal Gain at 2.0 GHz • 11 dB Small Signal Gain at 6.

Published: Apr 19, 2016 |