• Part: CGH40006P
  • Description: RF Power GaN HEMT
  • Manufacturer: Cree
  • Size: 1.60 MB
Download CGH40006P Datasheet PDF
Cree
CGH40006P
FEATURES - Up to 6 GHz Operation - 13 d B Small Signal Gain at 2.0 GHz - 11 d B Small Signal Gain at 6.0 GHz - 8 W typical at PIN = 32 d Bm - 65 % Efficiency at PIN = 32 d Bm - 28 V Operation APPLICATIONS - 2-Way Private Radio - Broadband Amplifiers - Cellular Infrastructure - Test Instrumentation - Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Rev 3.0 - May 2015 Subject to change without notice. .cree./rf Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage VDSS Gate-to-Source Voltage VGS -10, +2 Storage Temperature TSTG -65, +150 Operating Junction Temperature TJ 225 Maximum Forward Gate Current IGMAX Maximum Drain Current1 IDMAX Soldering Temperature2 TS 245 Thermal Resistance, Junction to...