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CGH09120F - GaN HEMT

General Description

Wolfspeed's CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications.

Key Features

  • UHF - 2.5 GHz Operation.
  • 21 dB Gain.
  • -38 dBc ACLR at 20 W PAVE.
  • 35% Efficiency at 20 W PAVE.
  • High Degree of DPD Correction Can be Applied Large Signal Models Available for ADS and MWO Rev. 2.3, 2022-10-14 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in thi.

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Full PDF Text Transcription (Reference)

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CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Description Wolfspeed's CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type: 440095 PN: CGH09120F Typical Performance Over 800-950 MHz (TC = 25˚C) of Demonstration Amplifier Parameter Gain @ 43 dBm ACLR @ 43 dBm Drain Efficiency @ 43 dBm 800 MHz 19.2 -40.5 31.0 850 MHz 21.0 -40.5 33.7 900 MHz 21.6 -39.0 36.6 950 MHz 21.6 -36.5 39.