CGH09120F Description
Wolfspeed's CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package. 1 Measured in the CGH09120F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67%...
CGH09120F Key Features
- 2.5 GHz Operation
- 21 dB Gain
- 38 dBc ACLR at 20 W PAVE
- 35% Efficiency at 20 W PAVE
- High Degree of DPD Correction Can be Applied