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CGH21240F - GaN HEMT

General Description

Wolfspeed's CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for 1.8-2.3 GHz WCDMA and LTE amplifier applications.

Key Features

  • 1.8 - 2.3 GHz Operation.
  • 15 dB Gain.
  • -35 dBc ACLR at 40 W PAVE.
  • 35% Efficiency at 40 W PAVE.
  • High Degree of DPD Correction can be Applied Large Signal Models Available for ADS and MWO Rev. 3.2, 2022-10-19 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in thi.

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Full PDF Text Transcription (Reference)

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CGH21240F 240 W, 1.8 - 2.3 GHz, GaN HEMT for WCDMA, LTE, WiMAX Description Wolfspeed's CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for 1.8-2.3 GHz WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Types: 440117 PN: CGH21240F Typical Performance Over 2.0-2.3 GHz (TC = 25˚C) of Demonstration Amplifier Parameter Gain @ 46 dBm ACLR @ 46 dBm Drain Efficiency @ 46 dBm 2.0 GHz 13.1 -36.5 30.5 2.1 GHz 14.6 -34.5 32.7 2.2 GHz 15.1 -34.2 32.9 2.3 GHz 15.7 -32.0 33.