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CGH21120F - GaN HEMT

General Description

Wolfspeed's CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for 1.8-2.3 GHz WCDMA and LTE amplifier applications.

Key Features

  • 1.8 - 2.3 GHz Operation.
  • 15 dB Gain.
  • -35 dBc ACLR at 20 W PAVE.
  • 35% Efficiency at 20 W PAVE.
  • High Degree of DPD Correction can be Applied Large Signal Models Available for ADS and MWO Rev. 3.3, 2022-12-15 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in thi.

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Full PDF Text Transcription (Reference)

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CGH21120F 120 W, 1.8 - 2.3 GHz, GaN HEMT for WCDMA, LTE, WiMAX Description Wolfspeed's CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for 1.8-2.3 GHz WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type: 440162 PN: CGH21120F Typical Performance Over 2.0-2.3 GHz (TC = 25˚C) of Demonstration Amplifier Parameter Gain @ 43 dBm ACLR @ 43 dBm Drain Efficiency @ 43 dBm 2.0 GHz 14.0 -36.5 33.5 2.1 GHz 15.0 -36.0 34.5 2.2 GHz 15.0 -34.0 36.5 2.3 GHz 14.5 -33.5 40.