Datasheet Details
| Part number | CGH21120F |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 4.00 MB |
| Description | GaN HEMT |
| Datasheet | CGH21120F-Wolfspeed.pdf |
|
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Overview: CGH21120F 120 W, 1.8 - 2.3 GHz, GaN HEMT for WCDMA, LTE, WiMAX.
| Part number | CGH21120F |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 4.00 MB |
| Description | GaN HEMT |
| Datasheet | CGH21120F-Wolfspeed.pdf |
|
|
|
Wolfspeed's CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for 1.8-2.3 GHz WCDMA and LTE amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
Package Type: 440162 PN: CGH21120F Typical Performance Over 2.0-2.3 GHz (TC = 25˚C) of Demonstration Amplifier Parameter Gain @ 43 dBm ACLR @ 43 dBm Drain Efficiency @ 43 dBm 2.0 GHz 14.0 -36.5 33.5 2.1 GHz 15.0 -36.0 34.5 2.2 GHz 15.0 -34.0 36.5 2.3 GHz 14.5 -33.5 40.0 Unit dB dBc % Notes: 1 Measured in the CGH21120F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping, PAR = 8.81 dB @ 0.01 % Probability on CCDF.
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