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CGH27030S - GaN HEMT

General Description

Wolfspeed’s CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier applications.

Key Features

  • for 28 V in CGH27030S-AMP1.
  • 1.8 - 2.2 GHz Operation.
  • 30 W Typical Output Power.
  • 18 dB Gain at 5 W PAVE.
  • -39 dBc ACLR at 5 W PAVE.
  • 33% efficiency at 5 W PAVE.
  • High degree of APD and DPD correction can be applied Features for 28 V in CGH27030S-AMP2.
  • 2.3 - 2.7 GHz Operation.
  • 30 W Typical Output Power.
  • 18.5 dB Gain at 5 W PAVE.
  • -39 dBc ACLR at 5 W PAVE.
  • 36% efficiency at 5 W PAVE.
  • High degree.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT Description Wolfspeed’s CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Package Type: 3x4 DFN PN: CGH27030S Typical Performance 1.8-2.7 GHz (TC = 25ºC), 28 V Parameter Small Signal Gain Adjacent Channel Power @ PAVE = 5 W Drain Efficiency @ PAVE = 5 W Input Return Loss 1.8 GHz1 20.0 -39.5 31.8 -4.2 2.0 GHz1 20.4 -42.1 32.8 -6.4 2.2 GHz1 19.5 -39.1 33.8 -7.7 2.3 GHz2 21.1 -32.0 37.8 -7.3 2.