CGH27030
CGH27030 is 82V GaN HEMT manufactured by MACOM Technology Solutions.
30 W, 28 V, GaN HEMT for Linear munications ranging from VHF to 3 GHz
Description
The CGH27030 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030 ideal for VHF, ms, 3G, 4G, LTE, 2.3-2.9 GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both screwdown, flange and solder-down, pill packages.
Package Types: 440196 and 440166 PN’s: CGH27030P and CGH27030F
Typical Performance Over 2.3-2.7GHz (TC = 25˚C) of Demonstration Amplifier
Parameter Small Signal Gain EVM at PAVE = 36 dBm Drain Efficiency at 36 dBm Input Return...
