CGH27030 Overview
The CGH27030 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030 ideal for VHF, ms, 3G, 4G, LTE, 2.3-2.9 GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both screwdown, flange and solder-down, pill packages.
CGH27030 Key Features
- 3.0 GHz Operation
- 30 W Peak Power Capability
- 15 dB Small Signal Gain
- 4.0 W PAVE at < 2.0 % EVM
- 28% Drain Efficiency at 4 W Average Power
- WiMAX Fixed Access 802.16-2004 OFDM
- WiMAX Mobile Access 802.16e OFDMA
