Overview: PRELIMINARY
CGH27030F
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. www.DataSheet4U.com Package Type : 440166 PN: CGH2703 0F Typical Performance Over 2.3-2.7GHz
Parameter Small Signal Gain EVM @ 21 dBm EVM @ 36 dBm Drain Efficiency @ 36 dBm Input Return Loss 2.3 GHz 14.1 2.3 1.7 26.0 7.9 13.8 2.1 1.7 26.2 7.2 (TC = 25˚C) of Demonstration Amplifier
2.6 GHz 13.2 1.7 1.8 25.8 6.4 2.7 GHz 13.0 1.9 2.0 25.7 7.2 Units dB % % % dB 2.4 GHz 2.5 GHz 13.5 1.7 1.8 26.0 6.6 Note: Measured in the CGH27030F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
