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CGH27030S Datasheet Gan Hemt

Manufacturer: MACOM Technology Solutions

Overview: CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT.

General Description

The CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier applications.

The CGH27030S operates from a 28 volt rail.

The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.

Key Features

  • for 28 V in CGH27030S-AMP1.
  • 1.8 - 2.2 GHz Operation.
  • 30 W Typical Output Power.
  • 18 dB Gain at 5 W PAVE.
  • -39 dBc ACLR at 5 W PAVE.
  • 33% efficiency at 5 W PAVE.
  • High degree of APD and DPD correction can be applied Features for 28 V in CGH27030S-AMP2.
  • 2.3 - 2.7 GHz Operation.
  • 30 W Typical Output Power.
  • 18.5 dB Gain at 5 W PAVE.
  • -39 dBc ACLR at 5 W PAVE.
  • 36% efficiency at 5 W PAVE.
  • High degree.

Similar Datasheet

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