CGH27030S Overview
The CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Tele and BWA amplifier applications. The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.
CGH27030S Key Features
- 2.2 GHz Operation
- 30 W Typical Output Power
- 18 dB Gain at 5 W PAVE
- 39 dBc ACLR at 5 W PAVE
- 33% efficiency at 5 W PAVE
- High degree of APD and DPD correction can be applied
- 2.7 GHz Operation
- 30 W Typical Output Power
- 18.5 dB Gain at 5 W PAVE
- 39 dBc ACLR at 5 W PAVE
