CGH27030S
CGH27030S is GaN HEMT manufactured by MACOM Technology Solutions.
30 W, DC
- 6.0 GHz, 28 V, GaN HEMT
Description
The CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Tele and BWA amplifier applications. The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.
Package Type: 3x4 DFN PN: CGH27030S
Typical Performance 1.8-2.7 GHz (TC = 25ºC), 28 V
Parameter
1.8 GHz1 2.0 GHz1 2.2 GHz1 2.3 GHz2 2.5 GHz2 2.7 GHz2
Small Signal Gain
Adjacent Channel Power @ PAVE...
