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CGH40010 Datasheet Rf Power Gan Hemt

Manufacturer: MACOM Technology Solutions

Overview: CGH40010 10 W, DC - 6 GHz, RF Power GaN HEMT.

General Description

The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits.

Key Features

  • Up to 6 GHz Operation.
  • 16 dB Small Signal Gain at 2.0 GHz.
  • 14 dB Small Signal Gain at 4.0 GHz.
  • 13 W typical PSAT.
  • 65 % Efficiency at PSAT.
  • 28 V Operation.

CGH40010 Distributor