CGH40010 Overview
Description
The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
Key Features
- Up to 6 GHz Operation
- 16 dB Small Signal Gain at 2.0 GHz
- 14 dB Small Signal Gain at 4.0 GHz
- 13 W typical PSAT
- 65 % Efficiency at PSAT
- 28 V Operation
