Datasheet4U Logo Datasheet4U.com

CGH40010 - RF Power GaN HEMT

General Description

The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 6 GHz Operation.
  • 16 dB Small Signal Gain at 2.0 GHz.
  • 14 dB Small Signal Gain at 4.0 GHz.
  • 13 W typical PSAT.
  • 65 % Efficiency at PSAT.
  • 28 V Operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CGH40010 RF Power GaN HEMT Cree
CGH40010 RF Power GaN HEMT Wolfspeed
CGH40006P RF Power GaN HEMT Cree
CGH40006P RF Power GaN HEMT Wolfspeed
CGH40006S RF Power GaN HEMT Cree

Other Datasheets by MACOM Technology Solutions

Part Number Description
CGH40006P RF Power GaN HEMT
CGH40006S RF Power GaN HEMT
CGH40025 RF Power GaN HEMT
CGH40035F RF Power GaN HEMT
CGH40045 DC-4GHz RF Power GaN HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CGH40010 10 W, DC - 6 GHz, RF Power GaN HEMT Description The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screwdown, flange and solder-down, pill packages. Package Type: 440166 & 440196 PNs: CGH40010F & CGH40010P Features • Up to 6 GHz Operation • 16 dB Small Signal Gain at 2.0 GHz • 14 dB Small Signal Gain at 4.