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CGH40010 - RF Power GaN HEMT

Product Overview

MACOM

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CGH40010 RF Power GaN HEMT by MACOM - Datasheet Preview — Datasheet preview – CGH40010

Datasheet Details

Part number	CGH40010
Manufacturer	MACOM
File Size	826.48 KB
Description	RF Power GaN HEMT
Datasheet	CGH40010 Datasheet
Additional preview pages of the CGH40010 datasheet.

Product details

Description

The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Features

Up to 6 GHz Operation.
16 dB Small Signal Gain at 2.0 GHz.
14 dB Small Signal Gain at 4.0 GHz.
13 W typical PSAT.
65 % Efficiency at PSAT.
28 V Operation.

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Published: Dec 29, 2024 |