Datasheet4U Logo Datasheet4U.com

CGH40010 Datasheet Rf Power Gan Hemt

Manufacturer: Cree (now Wolfspeed)

Overview: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and pressed amplifier circuits. .. The transistor is available in both screw-down, flange and solderdown, pill packages.

Key Features

  • Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 14 dB Small Signal Gain at 4.0 GHz 13 W typical P3dB 65 % Efficiency at P3dB 28 V Operation.

CGH40010 Distributor