CGH40010
CGH40010 is RF Power GaN HEMT manufactured by Cree.
PRELIMINARY
10 W, RF Power GaN HEMT
Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and pressed amplifier circuits. .. The transistor is available in both screw-down, flange and solderdown, pill packages.
Package Type s: 440166, & 440196 PN’s: CGH40 010F & CGH 40010P
Features
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- - Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 14 dB Small Signal Gain...
