CGH40010 - RF Power GaN HEMT

Datasheet Summary

Description

RES,1/16W,0603,1%,0 OHMS RES,1/16W,0603,1%,47 OHMS RES,1/16W,0603,1%,100 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 0.5pF, +/-0.05pF, 0603 CAP, 0.7pF, +/-0.1pF, 0603 CAP, 1.0pF, +/-0.1pF, 0603 CAP, 10.0

Features

Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 14 dB Small Signal Gain at 4.0 GHz 13 W typical P3dB 65 % Efficiency at P3dB 28 V Operation.

Cree

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Datasheet Details

Part number	CGH40010
Manufacturer	Cree
File Size	4.46 MB
Description	RF Power GaN HEMT
Datasheet	CGH40010 Datasheet
Additional preview pages of the CGH40010 datasheet.

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Full PDF Text Transcription

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PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits. www.DataSheet4U.com The transistor is available in both screw-down, flange and solderdown, pill packages. Package Type s: 440166, & 440196 PN’s: CGH40 010F & CGH 40010P FEATURES • • • • • • Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 14 dB Small Signal Gain at 4.

Published: Aug 18, 2008 |