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CGH40035F - RF Power GaN HEMT

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MACOM

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CGH40035F RF Power GaN HEMT by MACOM - Datasheet Preview — Datasheet preview – CGH40035F

Datasheet Details

Part number	CGH40035F
Manufacturer	MACOM
File Size	1.13 MB
Description	RF Power GaN HEMT
Datasheet	CGH40035F Datasheet
Additional preview pages of the CGH40035F datasheet.

Product details

Description

The CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Features

Up to 4 GHz Operation.
15 dB Small Signal Gain at 2.0 GHz.
13 dB Small Signal Gain at 4.0 GHz.
45 W typical PSAT.
60% Efficiency at PSAT.
28 V Operation.

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Published: Dec 30, 2024 |