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CGH40035F - RF Power GaN HEMT

General Description

The CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 4 GHz Operation.
  • 15 dB Small Signal Gain at 2.0 GHz.
  • 13 dB Small Signal Gain at 4.0 GHz.
  • 45 W typical PSAT.
  • 60% Efficiency at PSAT.
  • 28 V Operation.

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CGH40035F 35 W, DC - 4 GHz, RF Power GaN HEMT Description The CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40035F ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package. Package Type: 440193 PN: CGH40035F Features • Up to 4 GHz Operation • 15 dB Small Signal Gain at 2.0 GHz • 13 dB Small Signal Gain at 4.