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CGH40035F - RF Power GaN HEMT

General Description

RES, 1/16W, 0603, ≤5%, 5.1 OHMS RES, 1/16W, 0603, 1%, 100 OHMS CAP, 470PF, 5%, 100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 0.6pF, +/-0.05pF, 0603 CAP, 1.2pF, +/-0.1pF, 0603 CAP 4.7PF, +/- 0.25pF, ATC 100B CAP, 7.5pF, +/-0.1pF, 0603 CAP, 47pF,+/-5%pF

Key Features

  • Up to 4 GHz Operation.
  • 15 dB Small Signal Gain at 2.0 GHz.
  • 13 dB Small Signal Gain at 4.0 GHz.
  • 45 W typical PSAT.
  • 60 % Efficiency at PSAT.
  • 28 V Operation.

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Full PDF Text Transcription (Reference)

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CGH40035F 35 W, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40035F ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package. Package Type : 440193 PN: CGH4003 5F FEATURES • Up to 4 GHz Operation • 15 dB Small Signal Gain at 2.0 GHz • 13 dB Small Signal Gain at 4.0 GHz • 45 W typical PSAT • 60 % Efficiency at PSAT • 28 V Operation APPLICATIONS • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastructure www.DataSheet.