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CGH40035F Datasheet Rf Power Gan Hemt

Manufacturer: Cree (now Wolfspeed)

Overview: CGH40035F 35 W, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40035F ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package.

Key Features

  • Up to 4 GHz Operation.
  • 15 dB Small Signal Gain at 2.0 GHz.
  • 13 dB Small Signal Gain at 4.0 GHz.
  • 45 W typical PSAT.
  • 60 % Efficiency at PSAT.
  • 28 V Operation.

CGH40035F Distributor