CGH40035F Description
CGH40035F 35 W, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40035F ideal for linear and pressed amplifier circuits.
CGH40035F Key Features
- Up to 4 GHz Operation
- 15 dB Small Signal Gain at 2.0 GHz
- 13 dB Small Signal Gain at 4.0 GHz
- 45 W typical PSAT
- 60 % Efficiency at PSAT
- 28 V Operation
CGH40035F Applications
- Up to 4 GHz Operation