CGH40180PP Datasheet (Cree) - RF Power GaN HEMT

CGH40180PP, RF Power GaN HEMT

RES, 100 Ohm, +/-1%, 1 W, 2512 RES, 511 Ohm, +/- 5%, 1/16W, 0603 RES, 1/16W, 0603, 1%, 5.1 OHMS CAP, 27 pF,+/-5% 0805,ATC600F CAP, 3.9PF, +/-0.1 pF, 0603, ATC600S CAP, 3.3PF, +/-0.1 pF, 0603, ATC600S CAP, 1.8PF, +/-0.1 pF, 0603, ATC600S CAP, 1.0PF, +/-0.1 pF, 0603, ATC600S CAP, 0.9PF, +/-0.1 pF, 060

CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40180PP ideal for linear and compressed amplifier circuits.

The transistor is available in a 4-lead flange package.

PackaPgNe:TCyGpeHs4:

CGH40180PP Features

* Up to 2.5 GHz Operation

* 20 dB Small Signal Gain at 1.0 GHz

* 15 dB Small Signal Gain at 2.0 GHz

* 220 W typical PSAT

* 70 % Efficiency at PSAT

* 28 V Operation APPLICATIONS

* 2-Way Private Radio

* Broadband Amplifiers