CGH40180PP RF Power GaN HEMT

Cree

Description

CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CGH40180PP,.
RES, 100 Ohm, +/-1%, 1 W, 2512 RES, 511 Ohm, +/- 5%, 1/16W, 0603 RES, 1/16W, 0603, 1%, 5.

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Datasheet Specifications

Part number: CGH40180PP
Manufacturer: Cree
File Size: 1.89 MB
Datasheet: CGH40180PP-Cree.pdf
Description: RF Power GaN HEMT

Features

* Up to 2.5 GHz Operation
* 20 dB Small Signal Gain at 1.0 GHz
* 15 dB Small Signal Gain at 2.0 GHz
* 220 W typical PSAT
* 70 % Efficiency at PSAT

CGH40180PP Distributors

📁 Related Datasheet

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CGH40180PP Power GaN HEMT Cree

Cree CGH40180PP-like datasheet