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CGH40045

DC-4GHz RF Power GaN HEMT

CGH40045 Features

* Up to 4 GHz Operation

* 16 dB Small Signal Gain at 2.0 GHz

* 12 dB Small Signal Gain at 4.0 GHz

* 55 W Typical PSAT 55% Efficiency at PSAT 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Ce

CGH40045 General Description

The CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMT soffer high efficiency, high gain and wide bandwidth capabili.

CGH40045 Datasheet (1.24 MB)

Preview of CGH40045 PDF

Datasheet Details

Part number:

CGH40045

Manufacturer:

MACOM

File Size:

1.24 MB

Description:

Dc-4ghz rf power gan hemt.

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TAGS

CGH40045 DC-4GHz Power GaN HEMT MACOM

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