CGH40045 Datasheet, Hemt, MACOM

CGH40045 Features

• Hemt
• Up to 4 GHz Operation
• 16 dB Small Signal Gain at 2.0 GHz
• 12 dB Small Signal Gain at 4.0 GHz
• 55 W Typical PSAT 55% Effici

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Part number:

CGH40045

Manufacturer:

MACOM

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1.24MB

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📄 Datasheet

Description:

Dc-4ghz rf power gan hemt. The CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT). The CGH40045, operating from a 28 volt r

CGH40045 Application

• Applications GaN HEMT soffer high efficiency, high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and compressed amplifi

TAGS

CGH40045

MACOM

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