CGH27015F Datasheet - Cree

CGH27015F, GaN HEMT

PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor desig.
RES,1/16W,0603,1%,0 OHMS RES,1/16W,0603,1%,100 OHMS RES,1/16W,0603,1%,22.

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CGH27015F_Cree.pdf

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Datasheet Details

Part number:

CGH27015F

Manufacturer:

Cree

File Size:

1.63 MB

Description:

GaN HEMT

Features

* 2007 Rev 1.7
* May 2.3 - 2.9 GHz Operation >14.5 dB Small Signal Gain >2.0 W POUT at 2.0 % EVM 25 % Efficiency at 2.5 % EVM WiMAX Fixed Access 802.16-2004 OFDM WiMAX Mobile Access 802.16e OFDMA
* Subject to change without notice. w

Applications

* The transistor is available in ceramic, metal flange package. www. DataSheet4U. com Package Type : 440166 PN: CGH2701 5F Typical Performance 2.4-2.7 GHz Parameter Small Signal Gain POUT @ 2.0 % EVM Drain Efficiency @ 2.0 % EVM Input Return Loss Output Return Loss 2.4 GHz 14.5 34.0 23.0 7.0 5.0 (TC

CGH27015F Distributors

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CGH27015F GaN HEMT Cree

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