Datasheet Details
- Part number
- CGH27015F
- Manufacturer
- Cree
- File Size
- 1.63 MB
- Datasheet
- CGH27015F_Cree.pdf
- Description
- GaN HEMT
CGH27015F Description
PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor desig.
RES,1/16W,0603,1%,0 OHMS RES,1/16W,0603,1%,100 OHMS RES,1/16W,0603,1%,22.
CGH27015F Features
* 2007 Rev 1.7
* May
2.3 - 2.9 GHz Operation >14.5 dB Small Signal Gain >2.0 W POUT at 2.0 % EVM 25 % Efficiency at 2.5 % EVM WiMAX Fixed Access 802.16-2004 OFDM WiMAX Mobile Access 802.16e OFDMA
* Subject to change without notice. w
CGH27015F Applications
* The transistor is available in ceramic, metal flange package. www. DataSheet4U. com
Package Type : 440166 PN: CGH2701 5F
Typical Performance 2.4-2.7 GHz
Parameter Small Signal Gain POUT @ 2.0 % EVM Drain Efficiency @ 2.0 % EVM Input Return Loss Output Return Loss 2.4 GHz 14.5 34.0 23.0 7.0 5.0
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