Part number:
CGH27030S
Manufacturer:
MACOM
File Size:
2.71 MB
Description:
Gan hemt.
* for 28 V in CGH27030S-AMP1
* 1.8 - 2.2 GHz Operation
* 30 W Typical Output Power
* 18 dB Gain at 5 W PAVE
* -39 dBc ACLR at 5 W PAVE
* 33% efficiency at 5 W PAVE
* High degree of APD and DPD correction can be applied Features for 28 V in CGH27030S-AMP
CGH27030S
MACOM
2.71 MB
Gan hemt.
📁 Related Datasheet
CGH27030 - 82V GaN HEMT
(MACOM)
CGH27030
30 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Description
The CGH27030 is a gallium nitride (GaN) high electron mo.
CGH27030 - GaN HEMT
(Wolfspeed)
CGH27030
30 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Description
Wolfspeed's CGH27030 is a gallium nitride (GaN) high ele.
CGH27030F - GaN HEMT
(Cree)
PRELIMINARY
CGH27030F
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEM.
CGH27030S - GaN HEMT
(Wolfspeed)
CGH27030S
30 W, DC - 6.0 GHz, 28 V, GaN HEMT
Description
Wolfspeed’s CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transist.
CGH27015 - GaN HEMT
(CREE)
CGH27015
15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility tra.
CGH27015 - GaN HEMT
(Wolfspeed)
CGH27015
15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Description
Wolfspeed's CGH27015 is a gallium nitride (GaN) high ele.
CGH27015F - GaN HEMT
(Cree)
PRELIMINARY
CGH27015F
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor desig.
CGH27060F - GaN HEMT
(Cree)
PRELIMINARY
CGH27060F
60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEM.
