Datasheet Details
- Part number
- CGH27030S
- Manufacturer
- MACOM
- File Size
- 2.71 MB
- Datasheet
- CGH27030S-MACOM.pdf
- Description
- GaN HEMT
CGH27030S Description
CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT .
The CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and.
CGH27030S Features
* for 28 V in CGH27030S-AMP1
* 1.8 - 2.2 GHz Operation
* 30 W Typical Output Power
* 18 dB Gain at 5 W PAVE
* -39 dBc ACLR at 5 W PAVE
* 33% efficiency at 5 W PAVE
* High degree of APD and DPD correction can be applied
Features for 28 V in CGH27030S-AMP
CGH27030S Applications
* The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Package Type: 3x4 DFN PN: CGH27030S
Typical Performance 1.8-2.7 GHz (TC = 25ºC), 28 V
Parameter
1.8 GHz1 2.0 GHz1 2.2 GHz1 2.3 GHz2 2.5 GHz2 2.7 GHz2
Small Si
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