CGH27030S GaN HEMT

MACOM

Description

CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT .
The CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and.

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Datasheet Specifications

Part number: CGH27030S
Manufacturer: MACOM
File Size: 2.71 MB
Datasheet: CGH27030S-MACOM.pdf
Description: GaN HEMT

Features

* for 28 V in CGH27030S-AMP1
* 1.8 - 2.2 GHz Operation
* 30 W Typical Output Power
* 18 dB Gain at 5 W PAVE
* -39 dBc ACLR at 5 W PAVE
* 33% efficiency at 5 W PAVE
* High degree of APD and DPD correction can be applied Features for 28 V in CGH27030S-AMP

Applications

* The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Package Type: 3x4 DFN PN: CGH27030S Typical Performance 1.8-2.7 GHz (TC = 25ºC), 28 V Parameter 1.8 GHz1 2.0 GHz1 2.2 GHz1 2.3 GHz2 2.5 GHz2 2.7 GHz2 Small Si

CGH27030S Distributors

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CGH27030S GaN HEMT MACOM

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