CGH27030S Datasheet - MACOM

CGH27030S GaN HEMT

The CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGH27030S operates from a 28 vol.

CGH27030S Features

* for 28 V in CGH27030S-AMP1

* 1.8 - 2.2 GHz Operation

* 30 W Typical Output Power

* 18 dB Gain at 5 W PAVE

* -39 dBc ACLR at 5 W PAVE

* 33% efficiency at 5 W PAVE

* High degree of APD and DPD correction can be applied Features for 28 V in CGH27030S-AMP

CGH27030S-MACOM.pdf

CGH27030S Datasheet Preview — Preview of CGH27030S PDF

Datasheet Details

Part number:

CGH27030S

Manufacturer:

MACOM

File Size:

2.71 MB

Description:

Gan hemt.

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CGH27030S CGH27030S GaN HEMT MACOM

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