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CGH27030F

GaN HEMT

CGH27030F Features

* 2007 Rev 1.0

* May 2.3 - 2.9 GHz Operation >13.5 dB Small Signal Gain 26 % Drain Efficiency at 4 W POUT 3.7˚C/W Typical thermal resistance under 4.0 W PAVE OFDM WiMAX Fixed Access 802.16-2004 OFDM WiMAX Mobile Access 802.16e OFDMA

CGH27030F General Description

RES,1/16W,0603,1%,100 OHMS RES,1/16W,0603,1%,47 OHMS CAP, 470PF, 10%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 1.6pF, +/-0.1pF, 0603 CAP, 1.8pF, +/-0.1pF, 0603 CAP, 10.0pF,+/-5%, 0603 CAP, 39pF, +/-5%, 0603 CAP, 3.0pF, +/.

CGH27030F Datasheet (964.65 KB)

Preview of CGH27030F PDF

Datasheet Details

Part number:

CGH27030F

Manufacturer:

Cree

File Size:

964.65 KB

Description:

Gan hemt.
PRELIMINARY CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEM.

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CGH27030F GaN HEMT Cree

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