CGH27030F GaN HEMT

Cree

Description

PRELIMINARY CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEM.
RES,1/16W,0603,1%,100 OHMS RES,1/16W,0603,1%,47 OHMS CAP, 470PF, 10%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.

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Datasheet Specifications

Part number: CGH27030F
Manufacturer: Cree
File Size: 964.65 KB
Datasheet: CGH27030F_Cree.pdf
Description: GaN HEMT

Features

* 2007 Rev 1.0
* May 2.3 - 2.9 GHz Operation >13.5 dB Small Signal Gain 26 % Drain Efficiency at 4 W POUT 3.7˚C/W Typical thermal resistance under 4.0 W PAVE OFDM WiMAX Fixed Access 802.16-2004 OFDM WiMAX Mobile Access 802.16e OFDMA

Applications

* The transistor is supplied in a ceramic/metal flange package. www. DataSheet4U. com Package Type : 440166 PN: CGH2703 0F Typical Performance Over 2.3-2.7GHz Parameter Small Signal Gain EVM @ 21 dBm EVM @ 36 dBm Drain Efficiency @ 36 dBm Input Return Loss 2.3 GHz 14.1 2.3 1.7 26.0 7.9 13.8 2.1 1.7 2

CGH27030F Distributors

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CGH27030F GaN HEMT Cree

Cree CGH27030F-like datasheet