CGH35060F1 GaN HEMT

Cree

Description

CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electr.
RES, 1/16W, 0603, 1%, 5.

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CGH35060F1 Datasheet Preview — Preview of CGH35060F1 PDF

Datasheet Specifications

Part number: CGH35060F1
Manufacturer: Cree
File Size: 2.51 MB
Datasheet: CGH35060F1-Cree.pdf
Description: GaN HEMT

Features

* 3.3 - 3.6 GHz Operation
* 60 W Peak Power Capability
* 12 dB Small Signal Gain
* 8.0 W PAVE at < 2.0 % EVM
* 25 % Drain Efficiency at 8 W PAVE
* WiMAX Fixed Access 802.16-2004 OFDM
* WiMAX Mobile Access 802.16e OFDMA Rev 3.1 - Februar

Applications

* The transistor is supplied in a ceramic/ metal flange and pill package. Cree GaN-on-SiC HEMTs are highly correctable, enabling even greater efficiency when used with digital pre-distortion (DPD). PPNa: cCkGaHge35T0y6p0eF: 414&01C9G3H&354046001P916 Typical Performance Over 3.3-3.6GHz (TC = 25˚C) o

CGH35060F1 Distributors

📁 Related Datasheet

CGH35060F2 CGH35060P2 CGH31240F CGH09120F CGH21120F CGH21240F

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CGH35060F1 GaN HEMT Cree

Cree CGH35060F1-like datasheet