CGH35060F1 Datasheet, Hemt, Cree

CGH35060F1 Features

• Hemt
• 3.3 - 3.6 GHz Operation
• 60 W Peak Power Capability
• 12 dB Small Signal Gain
• 8.0 W PAVE at < 2.0 % EVM
• 25 % Drain Efficiency at 8 W

PDF File Details

Part number:

CGH35060F1

Manufacturer:

Cree

File Size:

2.51MB

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📄 Datasheet

Description:

Gan hemt. RES, 1/16W, 0603, 1%, 5.1 OHMS RES, 1/16W, 0603, 1%, 100 OHMS CAP, 470pF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%

CGH35060F1 Application

• Applications The transistor is supplied in a ceramic/ metal flange and pill package. Cree GaN-on-SiC HEMTs are highly correctable, enabling even gr

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CGH35060F1

Cree

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