Datasheet4U Logo Datasheet4U.com

CGH21120F

GaN HEMT

CGH21120F Features

* 1.8 - 2.3 GHz Operation

* 15 dB Gain

* -35 dBc ACLR at 20 W PAVE

* 35% Efficiency at 20 W PAVE

* High Degree of DPD Correction can be Applied Large Signal Models Available for ADS and MWO Rev. 3.3, 2022-12-15 4600 Silicon Drive | Durham, NC 27703 | Tel: +

CGH21120F General Description

Wolfspeed's CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for 1.8-2.3 GHz WCDMA and LTE amplifier applications. The transistor is supplied in a cerami.

CGH21120F Datasheet (4.00 MB)

Preview of CGH21120F PDF

Datasheet Details

Part number:

CGH21120F

Manufacturer:

Wolfspeed

File Size:

4.00 MB

Description:

Gan hemt.

📁 Related Datasheet

CGH21240F GaN HEMT (Wolfspeed)

CGH27015 GaN HEMT (CREE)

CGH27015 GaN HEMT (Wolfspeed)

CGH27015F GaN HEMT (Cree)

CGH27030 82V GaN HEMT (MACOM)

CGH27030 GaN HEMT (Wolfspeed)

CGH27030F GaN HEMT (Cree)

CGH27030S GaN HEMT (MACOM)

CGH27030S GaN HEMT (Wolfspeed)

CGH27060F GaN HEMT (Cree)

TAGS

CGH21120F GaN HEMT Wolfspeed

Image Gallery

CGH21120F Datasheet Preview Page 2 CGH21120F Datasheet Preview Page 3

CGH21120F Distributor