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CGH21120F GaN HEMT

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Description

CGH21120F 120 W, 1.8 - 2.3 GHz, GaN HEMT for WCDMA, LTE, WiMAX .
Wolfspeed's CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wid.

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Datasheet Specifications

Part number
CGH21120F
Manufacturer
Wolfspeed
File Size
4.00 MB
Datasheet
CGH21120F-Wolfspeed.pdf
Description
GaN HEMT

Features

* 1.8 - 2.3 GHz Operation
* 15 dB Gain
* -35 dBc ACLR at 20 W PAVE
* 35% Efficiency at 20 W PAVE
* High Degree of DPD Correction can be Applied Large Signal Models Available for ADS and MWO Rev. 3.3, 2022-12-15 4600 Silicon Drive | Durham, NC 27703 | Tel: +

Applications

* The transistor is supplied in a ceramic/metal flange package. Package Type: 440162 PN: CGH21120F Typical Performance Over 2.0-2.3 GHz (TC = 25˚C) of Demonstration Amplifier Parameter Gain @ 43 dBm ACLR @ 43 dBm Drain Efficiency @ 43 dBm 2.0 GHz 14.0 -36.5 33.5 2.1 GHz 15.0 -36.0 34.5 2.2 GHz

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