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CGH09120F

GaN HEMT

CGH09120F Features

* UHF - 2.5 GHz Operation

* 21 dB Gain

* -38 dBc ACLR at 20 W PAVE

* 35% Efficiency at 20 W PAVE

* High Degree of DPD Correction Can be Applied Large Signal Models Available for ADS and MWO Rev. 2.3, 2022-10-14 4600 Silicon Drive | Durham, NC 27703 | Tel: +

CGH09120F General Description

Wolfspeed's CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/me.

CGH09120F Datasheet (4.46 MB)

Preview of CGH09120F PDF

Datasheet Details

Part number:

CGH09120F

Manufacturer:

Wolfspeed

File Size:

4.46 MB

Description:

Gan hemt.

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TAGS

CGH09120F GaN HEMT Wolfspeed

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