CGH09120F GaN HEMT

Wolfspeed

Description

CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM .
Wolfspeed's CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wid.

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Datasheet Specifications

Part number: CGH09120F
Manufacturer: Wolfspeed
File Size: 4.46 MB
Datasheet: CGH09120F-Wolfspeed.pdf
Description: GaN HEMT

Features

* UHF - 2.5 GHz Operation
* 21 dB Gain
* -38 dBc ACLR at 20 W PAVE
* 35% Efficiency at 20 W PAVE
* High Degree of DPD Correction Can be Applied Large Signal Models Available for ADS and MWO Rev. 2.3, 2022-10-14 4600 Silicon Drive | Durham, NC 27703 | Tel: +

Applications

* The transistor is supplied in a ceramic/metal flange package. Package Type: 440095 PN: CGH09120F Typical Performance Over 800-950 MHz (TC = 25˚C) of Demonstration Amplifier Parameter Gain @ 43 dBm ACLR @ 43 dBm Drain Efficiency @ 43 dBm 800 MHz 19.2 -40.5 31.0 850 MHz 21.0 -40.5 33.7 900 MHz

CGH09120F Distributors

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CGH09120F GaN HEMT Wolfspeed

Wolfspeed CGH09120F-like datasheet