Datasheet Details
- Part number
- CGH27030
- Manufacturer
- MACOM
- File Size
- 950.49 KB
- Datasheet
- CGH27030-MACOM.pdf
- Description
- 82V GaN HEMT
CGH27030 Description
CGH27030 30 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz .
The CGH27030 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwid.
CGH27030 Features
* VHF - 3.0 GHz Operation
* 30 W Peak Power Capability
* 15 dB Small Signal Gain
* 4.0 W PAVE at < 2.0 % EVM
* 28% Drain Efficiency at 4 W Average Power
* WiMAX Fixed Access 802.16-2004 OFDM
* WiMAX Mobile Access 802.16e OFDMA
Large Signal Mo
CGH27030 Applications
* The unmatched transistor is available in both screwdown, flange and solder-down, pill packages. Package Types: 440196 and 440166 PN’s: CGH27030P and CGH27030F
Typical Performance Over 2.3-2.7GHz (TC = 25˚C) of Demonstration Amplifier
Parameter Small Signal Gain EVM at PAVE = 36 dBm Drain Efficie
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