CGH27030 82V GaN HEMT

MACOM

Description

CGH27030 30 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz .
The CGH27030 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwid.

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Datasheet Specifications

Part number: CGH27030
Manufacturer: MACOM
File Size: 950.49 KB
Datasheet: CGH27030-MACOM.pdf
Description: 82V GaN HEMT

Features

* VHF - 3.0 GHz Operation
* 30 W Peak Power Capability
* 15 dB Small Signal Gain
* 4.0 W PAVE at < 2.0 % EVM
* 28% Drain Efficiency at 4 W Average Power
* WiMAX Fixed Access 802.16-2004 OFDM
* WiMAX Mobile Access 802.16e OFDMA Large Signal Mo

Applications

* The unmatched transistor is available in both screwdown, flange and solder-down, pill packages. Package Types: 440196 and 440166 PN’s: CGH27030P and CGH27030F Typical Performance Over 2.3-2.7GHz (TC = 25˚C) of Demonstration Amplifier Parameter Small Signal Gain EVM at PAVE = 36 dBm Drain Efficie

CGH27030 Distributors

📁 Related Datasheet

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CGH27030 82V GaN HEMT MACOM

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