CGH27015 - GaN HEMT
CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications.
The unmatched transistor is available in both screw-down, flange and solder-down, pill packages.
PPacNk:aCgGeHT2y7p0e1: 454F0a1n6d6CaGnHd247400115
