CGHV96100F2 Datasheet - CREE

CGHV96100F2 - Input/Output Matched GaN HEMT / Power Amplifer

RES, 47 OHM +/-1%, 1/16 W, 0603, SMD CAP, 1.6 pF +/-0.05 pF, 0603, ATC 600L CAP, 1.0 pF +/-0.05 pF, 0603, ATC 600L CAP, 10 pF +/-5%, 0603, ATC CAP, 470 pF +/-5%, 100 V, 0603 CAP, 33,000 pF, 0805, 100 V, X7R CAP, 10 uF, 16 V, TANTALUM CAP, 470 uF +/-20%, ELECTROLYTIC CONNECTOR, SMA, PANEL MOUNT JACK,

CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.

This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies.

GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conducti

CGHV96100F2 Features

* Applications

* 8.4 - 9.6 GHz Operation

* 145 W POUT typical

* 10 dB Power Gain

* 45 % Typical PAE 2012 Rev 1.0

* May

* Marine Radar

* Weather Monitoring

* Air Traffic Control

* Maritime Vessel Traffic Control

CGHV96100F2_CREE.pdf