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CGHV96130F Datasheet - Wolfspeed

CGHV96130F GaN HEMT

Cree’s CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arse.

CGHV96130F Features

* 8.4 - 9.6 GHz Operation

* 166 W POUT typical 7.5 dB Power Gain

* 42% Typical PAE

* 50 Ohm Internally Matched

CGHV96130F-Wolfspeed.pdf

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Datasheet Details

Part number:

CGHV96130F

Manufacturer:

Wolfspeed

File Size:

937.83 KB

Description:

Gan hemt.

CGHV96130F Distributor

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TAGS

CGHV96130F CGHV96130F GaN HEMT Wolfspeed