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CGHV96130F GaN HEMT

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Description

CGHV96130F 130 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT .
Cree’s CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.

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Datasheet Specifications

Part number
CGHV96130F
Manufacturer
Wolfspeed
File Size
937.83 KB
Datasheet
CGHV96130F-Wolfspeed.pdf
Description
GaN HEMT

Features

* 8.4 - 9.6 GHz Operation
* 166 W POUT typical 7.5 dB Power Gain
* 42% Typical PAE
* 50 Ohm Internally Matched

Applications

* Marine Radar
* Weather Monitoring
* Air Traffic Control
* Maritime Vessel Traffic Control
* Port Security Large Signal Models Available for ADS and MWO Rev 1.3 - August 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed. com CGHV96130F 2 Absolute Max

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