Datasheet4U.com

CGHV96130F - GaN HEMT

Product Overview

Wolfspeed

📥 Download Datasheet

CGHV96130F GaN HEMT by Wolfspeed - Datasheet Preview — Datasheet preview – CGHV96130F

Datasheet Details

Part number	CGHV96130F
Manufacturer	Wolfspeed
File Size	937.83 KB
Description	GaN HEMT
Datasheet	CGHV96130F Datasheet
Additional preview pages of the CGHV96130F datasheet.

Product details

Description

Cree’s CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.

Features

8.4 - 9.6 GHz Operation.
166 W POUT typical 7.5 dB Power Gain.
42% Typical PAE.
50 Ohm Internally Matched.

📁 Similar Datasheet

CGHV96100F2 - GaN Amplifier (MACOM)
CGHV96050F1 - Input/Output Matched GaN HEMT (CREE)
CGHV14250 - GaN HEMT (Cree)
CGHV14500 - GaN HEMT (Cree)
CGHV14500F - GaN HEMT (MACOM)
CGHV14800 - GaN HEMT (Cree)
CGHV14800F - GaN HEMT (Cree)
CGHV1F006S - GaN HEMT (Cree)

Other Datasheets by Wolfspeed

CGHV96050F2 - GaN HEMT
CGHV14800F1 - 800W GaN Transistor
CGHV1F025S - GaN HEMT
CGHV1J006D - GaN HEMT Die
CGHV1J025D - GaN HEMT Die
CGHV1J070D - GaN HEMT Die

Published: Apr 8, 2021 |