CGHV96130F

GaN HEMT

Wolfspeed

CGHV96130F Features

* 8.4 - 9.6 GHz Operation

* 166 W POUT typical 7.5 dB Power Gain

* 42% Typical PAE

* 50 Ohm Internally Matched

CGHV96130F General Description

Cree’s CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arse.

CGHV96130F Datasheet (937.83 KB)

CGHV96130F Datasheet Preview — Preview of CGHV96130F PDF

Datasheet Details

Part number:

CGHV96130F

Manufacturer:

Wolfspeed

File Size:

937.83 KB

Description:

Gan hemt.

📁 Related Datasheet

CGHV96130F 130W GaN Amplifier (MACOM)

CGHV96100F2 GaN Amplifier (MACOM)

CGHV96100F2 Input/Output Matched GaN HEMT / Power Amplifer (CREE)

CGHV96100F2 GaN HEMT (Wolfspeed)

CGHV96050F1 Input/Output Matched GaN HEMT (CREE)

CGHV96050F2 GaN HEMT (Wolfspeed)

CGHV96050F2 GaN HEMT (MACOM)

CGHV14250 GaN HEMT (Cree)

CGHV14250 GaN HEMT (Wolfspeed)

CGHV14500 GaN HEMT (Cree)

TAGS

CGHV96130F GaN HEMT Wolfspeed

Image Gallery

CGHV96130F Features

CGHV96130F General Description

Datasheet Details

File Size:

Description:

CGHV96130F Distributor