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CGHV1F006S Datasheet - Cree

CGHV1F006S GaN HEMT

CGHV1F006S 6 W, DC - 15 GHz, 40V, GaN HEMT Creeโ€™s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet specifications are based on a C-Band (5.5 - 6.5 GHz) amplifier. Additional application circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 9.6.

CGHV1F006S Datasheet (5.24 MB)

Preview of CGHV1F006S PDF

Datasheet Details

Part number:

CGHV1F006S

Manufacturer:

Cree

File Size:

5.24 MB

Description:

Gan hemt.

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CGHV1F006S GaN HEMT Cree

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