Datasheet Specifications
- Part number
- CGHV1F006S
- Manufacturer
- Cree
- File Size
- 5.24 MB
- Datasheet
- CGHV1F006S-Cree.pdf
- Description
- GaN HEMT
Description
CGHV1F006S 6 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed .
Applications
* The datasheet specifications are based on a C-Band (5.5 - 6.5 GHz) amplifier. Additional application circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 9.6 GHz. The CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dualCGHV1F006S Distributors
📁 Related Datasheet
📌 All Tags