CGHV1F006S Datasheet - Cree

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5.24 MB

Description:

Gan hemt.
CGHV1F006S 6 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed .