CGHV1F006S Datasheet - Cree

CGHV1F006S, GaN HEMT

CGHV1F006S 6 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed .

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CGHV1F006S-Cree.pdf

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Datasheet Details

Part number:

CGHV1F006S

Manufacturer:

Cree

File Size:

5.24 MB

Description:

GaN HEMT

Applications

* The datasheet specifications are based on a C-Band (5.5 - 6.5 GHz) amplifier. Additional application circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 9.6 GHz. The CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual

CGHV1F006S Distributors

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CGHV1F006S GaN HEMT Cree

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