CGHV1J006D Datasheet, Die, Wolfspeed

CGHV1J006D Features

• Die It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage. PN: CGHV1J006D Features
• 17 dB Typ. Small Signal Gain at 10

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CGHV1J006D

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Wolfspeed

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📄 Datasheet

Description:

Gan hemt die. Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, us

CGHV1J006D Application

• Applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage. PN: CGHV1J006D Features
• 17 dB Typ. Small Signal Gai

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CGHV1J006D

Wolfspeed

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