CGHV1J006D - GaN HEMT Die

Product Overview

Wolfspeed

Datasheet Details

Part number	CGHV1J006D
Manufacturer	Wolfspeed
File Size	737.09 KB
Description	GaN HEMT Die
Datasheet	CGHV1J006D Datasheet
Additional preview pages of the CGHV1J006D datasheet.

Product details

Description

Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process.

Features

It is ideal for a variety of.

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Published: Apr 8, 2021 |