Datasheet Details
- Part number
- CGHV14500F
- Manufacturer
- MACOM
- File Size
- 2.29 MB
- Datasheet
- CGHV14500F-MACOM.pdf
- Description
- GaN HEMT
CGHV14500F Description
CGHV14500F 500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems .
The CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandw.
CGHV14500F Features
* Reference design amplifier 1.2 - 1.4 GHz Operation
* FET tuning range UHF through 1800 MHz
* 500 W Typical Output Power
* 16 dB Power Gain
* 68% Typical Drain Efficiency
CGHV14500F Applications
* The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package. Package Types: 440117, 440133 PNs: CGHV14500F, CGHV14500P
Typical Performance Over 1.2 - 1.4 GHz (TC = 25ºC) of Demonstration Amplifier
📁 Related Datasheet
📌 All Tags