CGHV14500F - GaN HEMT
The CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier applications.
The transistor could be utilized for band spe
CGHV14500F Features
* Reference design amplifier 1.2 - 1.4 GHz Operation
* FET tuning range UHF through 1800 MHz
* 500 W Typical Output Power
* 16 dB Power Gain
* 68% Typical Drain Efficiency
