CGHV14500F - GaN HEMT

Product Overview

MACOM

Datasheet Details

Part number	CGHV14500F
Manufacturer	MACOM
File Size	2.29 MB
Description	GaN HEMT
Datasheet	CGHV14500F Datasheet
Additional preview pages of the CGHV14500F datasheet.

Product details

Description

The CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier applications.

Features

Reference design amplifier 1.2 - 1.4 GHz Operation.
FET tuning range UHF through 1800 MHz.
500 W Typical Output Power.
16 dB Power Gain.
68% Typical Drain Efficiency.

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Published: Dec 30, 2024 |