CGHV14500F GaN HEMT

MACOM

Description

CGHV14500F 500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems .
The CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandw.

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Datasheet Specifications

Part number: CGHV14500F
Manufacturer: MACOM
File Size: 2.29 MB
Datasheet: CGHV14500F-MACOM.pdf
Description: GaN HEMT

Features

* Reference design amplifier 1.2 - 1.4 GHz Operation
* FET tuning range UHF through 1800 MHz
* 500 W Typical Output Power
* 16 dB Power Gain
* 68% Typical Drain Efficiency

Applications

* The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package. Package Types: 440117, 440133 PNs: CGHV14500F, CGHV14500P Typical Performance Over 1.2 - 1.4 GHz (TC = 25ºC) of Demonstration Amplifier

CGHV14500F Distributors

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CGHV14500F GaN HEMT MACOM

MACOM CGHV14500F-like datasheet