Datasheet Details
- Part number
- CGHV40050
- Manufacturer
- MACOM
- File Size
- 697.33 KB
- Datasheet
- CGHV40050-MACOM.pdf
- Description
- GaN HEMT
CGHV40050 Description
CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT .
The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
CGHV40050 Features
* Up to 4 GHz Operation
* 77 W Typical Output Power
* 17.5 dB Small Signal Gain at 1.8 GHz
CGHV40050 Applications
* up to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously. It is a demonstration amplifier to showcase the CGHV40050’s high efficiency, high gain and wide bandwidth capabilities. The device can be used for a range of applications from narrow band
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