CGHV40050 Datasheet - MACOM

GaN HEMT

CGHV40050 Features

* Up to 4 GHz Operation

* 77 W Typical Output Power

* 17.5 dB Small Signal Gain at 1.8 GHz

* Application Circuit for 0.8 - 2.0 GHz

* 53% Efficiency at PSAT

* 50 V Operation Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions In

CGHV40050 General Description

The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz. The reference HPA design in the datasheet operates from.

CGHV40050 Datasheet (697.33 KB)

CGHV40050 Datasheet Preview — Preview of CGHV40050 PDF

Datasheet Details

Part number:

CGHV40050

Manufacturer:

MACOM

File Size:

697.33 KB

Description:

Gan hemt.

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CGHV40050 GaN HEMT MACOM

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CGHV40050 Features

CGHV40050 General Description

Datasheet Details

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