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CGHV40050 - GaN HEMT

CGHV40050 Description

CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT .
The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

CGHV40050 Features

* Up to 4 GHz Operation
* 77 W Typical Output Power
* 17.5 dB Small Signal Gain at 1.8 GHz

CGHV40050 Applications

* up to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously. It is a demonstration amplifier to showcase the CGHV40050’s high efficiency, high gain and wide bandwidth capabilities. The device can be used for a range of applications from narrow band

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Datasheet Details

Part number
CGHV40050
Manufacturer
MACOM
File Size
697.33 KB
Datasheet
CGHV40050-MACOM.pdf
Description
GaN HEMT

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