CGHV40050 - GaN HEMT
The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz.
The reference HPA design in the datasheet operates from
CGHV40050 Features
* Up to 4 GHz Operation
* 77 W Typical Output Power
* 17.5 dB Small Signal Gain at 1.8 GHz
* Application Circuit for 0.8 - 2.0 GHz
* 53% Efficiency at PSAT
* 50 V Operation Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions In
