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CGHV40200PP

GaN HEMT

CGHV40200PP Features

* Up to 3.0 GHz Operation

* 21 dB Small Signal Gain at 1.8 GHz

* 250 W typical PSAT

* 67% Efficiency at PSAT

* 50 V Operation Package Type: 440199 PN: CGHV40200PP Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Cellular Inf

CGHV40200PP General Description

The CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth c.

CGHV40200PP Datasheet (796.44 KB)

Preview of CGHV40200PP PDF

Datasheet Details

Part number:

CGHV40200PP

Manufacturer:

MACOM

File Size:

796.44 KB

Description:

Gan hemt.

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TAGS

CGHV40200PP GaN HEMT MACOM

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