CGHV40200PP - GaN HEMT
The CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth c
CGHV40200PP Features
* Up to 3.0 GHz Operation
* 21 dB Small Signal Gain at 1.8 GHz
* 250 W typical PSAT
* 67% Efficiency at PSAT
* 50 V Operation Package Type: 440199 PN: CGHV40200PP Applications
* 2-Way Private Radio
* Broadband Amplifiers
* Cellular Inf
