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CGHV40180P Datasheet - MACOM

CGHV40180P - 18W GaN HEMT

The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain, and wide bandwidth ca

CGHV40180P Features

* Up to 2.0 GHz operation

* 24 dB small signal gain at 900 MHz

* 20 dB power gain at 900 MHz

* 250 W typical output power at 900 MHz

* 75% efficiency at PSAT Applications

* Military communications

* Public safety VHF-UHF applications

CGHV40180P-MACOM.pdf

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Datasheet Details

Part number:

CGHV40180P

Manufacturer:

MACOM

File Size:

654.52 KB

Description:

18w gan hemt.

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