CGHV40180P Datasheet - MACOM

CGHV40180P, 18W GaN HEMT

CGHV40180P 180 W, DC - 2.0 GHz, 50 V, GaN HEMT .
The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Datasheet Details

Part number:

CGHV40180P

Manufacturer:

MACOM

File Size:

654.52 KB

Description:

18W GaN HEMT

Features

* Up to 2.0 GHz operation
* 24 dB small signal gain at 900 MHz
* 20 dB power gain at 900 MHz
* 250 W typical output power at 900 MHz

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