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CGHV40180P - 18W GaN HEMT

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MACOM

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CGHV40180P 18W GaN HEMT by MACOM - Datasheet Preview — Datasheet preview – CGHV40180P

Datasheet Details

Part number	CGHV40180P
Manufacturer	MACOM
File Size	654.52 KB
Description	18W GaN HEMT
Datasheet	CGHV40180P Datasheet
Additional preview pages of the CGHV40180P datasheet.

Product details

Description

The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Features

Up to 2.0 GHz operation.
24 dB small signal gain at 900 MHz.
20 dB power gain at 900 MHz.
250 W typical output power at 900 MHz.
75% efficiency at PSAT.

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Published: May 9, 2024 |