CGHV40180P - 18W GaN HEMT
The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain, and wide bandwidth ca
CGHV40180P Features
* Up to 2.0 GHz operation
* 24 dB small signal gain at 900 MHz
* 20 dB power gain at 900 MHz
* 250 W typical output power at 900 MHz
* 75% efficiency at PSAT Applications
* Military communications
* Public safety VHF-UHF applications
