CGHV40180P Datasheet - MACOM

CGHV40180P 18W GaN HEMT

The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain, and wide bandwidth ca.

CGHV40180P Features

* Up to 2.0 GHz operation

* 24 dB small signal gain at 900 MHz

* 20 dB power gain at 900 MHz

* 250 W typical output power at 900 MHz

* 75% efficiency at PSAT Applications

* Military communications

* Public safety VHF-UHF applications

CGHV40180P-MACOM.pdf

CGHV40180P Datasheet Preview — Preview of CGHV40180P PDF

Datasheet Details

Part number:

CGHV40180P

Manufacturer:

MACOM

File Size:

654.52 KB

Description:

18w gan hemt.

📁 Related Datasheet

CGHV40180F GaN HEMT (Cree)

CGHV40180F GaN HEMT (MACOM)

CGHV40100 100W GaN HEMT (MACOM)

CGHV40100 GaN HEMT (Cree)

CGHV40100 GaN HEMT (Wolfspeed)

CGHV40030 GaN HEMT (MACOM)

CGHV40030 GaN HEMT (Cree)

CGHV40030 GaN HEMT (Wolfspeed)

TAGS

CGHV40180P CGHV40180P 18W GaN HEMT MACOM

CGHV40180P Distributor