CGHV40180P 18W GaN HEMT

MACOM

Description

CGHV40180P 180 W, DC - 2.0 GHz, 50 V, GaN HEMT .
The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Datasheet Specifications

Features

* Up to 2.0 GHz operation
* 24 dB small signal gain at 900 MHz
* 20 dB power gain at 900 MHz
* 250 W typical output power at 900 MHz

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