CGHV1F025S Datasheet - MACOM

CGHV1F025S, GaN HEMT

CGHV1F025S 25 W, DC - 15 GHz, 40 V, GaN HEMT .
The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain an.

datasheet Preview Page 1 from Datasheet4u.com

CGHV1F025S-MACOM.pdf

CGHV1F025S Datasheet Preview — Preview of CGHV1F025S PDF

Datasheet Details

Part number:

CGHV1F025S

Manufacturer:

MACOM

File Size:

1.29 MB

Description:

GaN HEMT

Features

* Up to 15 GHz Operation
* 25 W Typical Output Power
* 11 dB Gain at 9.4 GHz

Applications

* The datasheet specifications are based on a X-Band (8.9 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40V to as low as 20V VDD, maintaining high

CGHV1F025S Distributors

📁 Related Datasheet

CGHV1F006S CGHV14250 CGHV14500 CGHV14800 CGHV14800F CGHV14800F1

📌 All Tags

CGHV1F025S GaN HEMT MACOM

MACOM CGHV1F025S-like datasheet