CGHV1F025S

GaN HEMT

MACOM

CGHV1F025S Features

* Up to 15 GHz Operation

* 25 W Typical Output Power

* 11 dB Gain at 9.4 GHz

* Application circuit for 8.9 - 9.6 GHz Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the p

CGHV1F025S General Description

The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L-, S-, C-, X- and Ku-Band amplifier applications. The datasheet specifications are base.

CGHV1F025S Datasheet (1.29 MB)

CGHV1F025S Datasheet Preview — Preview of CGHV1F025S PDF

Datasheet Details

Part number:

CGHV1F025S

Manufacturer:

MACOM

File Size:

1.29 MB

Description:

Gan hemt.

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CGHV1F025S GaN HEMT MACOM

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CGHV1F025S Features

CGHV1F025S General Description

Datasheet Details

File Size:

Description:

CGHV1F025S Distributor