CGHV1F025S - GaN HEMT
The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L-, S-, C-, X- and Ku-Band amplifier applications.
The datasheet specifications are base
CGHV1F025S Features
* Up to 15 GHz Operation
* 25 W Typical Output Power
* 11 dB Gain at 9.4 GHz
* Application circuit for 8.9 - 9.6 GHz Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the p
