CGHV1F025S Datasheet, Hemt, MACOM

CGHV1F025S Features

• Hemt
• Up to 15 GHz Operation
• 25 W Typical Output Power
• 11 dB Gain at 9.4 GHz
• Application circuit for 8.9 - 9.6 GHz Large Signal Models Available for A

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Part number:

CGHV1F025S

Manufacturer:

MACOM

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1.29MB

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📄 Datasheet

Description:

Gan hemt. The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficie

CGHV1F025S Application

• Applications The datasheet specifications are based on a X-Band (8.9 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuit while ho

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CGHV1F025S

MACOM

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