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CGHV31500F1 500W GaN HPA

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Description

CGHV31500F1 2.7 * 3.1 GHz, 500 W GaN HPA .
The CGHV31500F1 is a 500W packaged transistor fully matched to 50 ohms at both input and output ports.

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Datasheet Specifications

Part number
CGHV31500F1
Manufacturer
MACOM
File Size
655.61 KB
Datasheet
CGHV31500F1-MACOM.pdf
Description
500W GaN HPA

Features

* Psat: 500 W
* DE: 60 %
* LSG: 11 dB
* S21: 13 dB
* S11: -5 dB
* S22: -6 dB
* Long pulse operation Note: Features are typical performance under 25°C, pulsed operation. Please reference performance charts for additional information. Applicatio

Applications

* The CGHV31500F1 typically achieves 500 W of saturated output power with 11 dB of large signal gain and 60% drain efficiency under long pulse operation. Packaged in a thermally-enhanced, flange package, the CGHV31500F1 provides superior performance under long pulse operation allowing customers to im

CGHV31500F1 Distributors

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